SFT1350 - P-Channel Power MOSFET

onsemi

Key Features

ON-resistance RDS(on)1=45mΩ(typ. ).
Input Capacitance Ciss=590pF(typ. ).
Halogen free compliance.
Protection diode in.
4.5V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --40 ±.

SFT1350 p-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	SFT1350
Manufacturer	onsemi
File Size	314.65 KB
Description	P-Channel Power MOSFET
Datasheet	SFT1350 Datasheet

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Other Datasheets by onsemi

Part Number	Description
SFT1341	MOSFET
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Full PDF Text Transcription (Reference)

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Ordering number : ENA1874A SFT1350 P-Channel Power MOSFET –40V, –19A, 59mΩ, Single TP/TP-FA http://onsemi.com Features • ON-resistance RDS(on)1=45mΩ(typ.) • Input Capacitance Ciss=590pF(typ.) • Halogen free compliance • Protection diode in • 4.5V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --40 ±20 --19 --76 1.0 23 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.