Datasheet4U Logo Datasheet4U.com

SFT1431 - Power MOSFET

Key Features

  • Low On-Resistance.
  • High Speed Switching.
  • Low Gate Charge.
  • ESD Diode-Protected Gate.
  • Pb-free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current PW≤10μs, duty cycle≤1% ID IDP Power Dissipation Junction Temperature Storage Temperature Tc=25°C PD Tj Tstg Thermal Resistance Ratings Parameter Junction to Case Stead.

📥 Download Datasheet

Datasheet Details

Part number SFT1431
Manufacturer onsemi
File Size 358.56 KB
Description Power MOSFET
Datasheet download datasheet SFT1431 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SFT1431 N-Channel Silicon MOSFET Sanyo Semicon Device
SFT1431-E N-Channel MOSFET VBsemi
SFT14 (SFT11 - SFT18) Super Fast Rectifiers Taiwan Semiconductor
SFT1402 N-Channel Silicon MOSFET General-Purpose Switching Device Sanyo Semicon Device
SFT1403 N-Channel Silicon MOSFET General-Purpose Switching Device Sanyo Semicon Device

Other Datasheets by onsemi

Part Number Description
SFT1423 N-Channel Power MOSFET
SFT1440 N-Channel Power MOSFET
SFT1443 Power MOSFET
SFT1445 N-Channel Power MOSFET
SFT1446 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENA1624B SFT1431 Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current PW≤10μs, duty cycle≤1% ID IDP Power Dissipation Junction Temperature Storage Temperature Tc=25°C PD Tj Tstg Thermal Resistance Ratings Parameter Junction to Case Steady State Junction to Ambient *1 Note : *1 Insertion mounted Symbol RθJC RθJA Value 35 ±20 11 44 1.0 15 150 −55 to +150 Unit V V A A W W °C °C Value 8.33 125 Unit °C/W http://onsemi.