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SFT1440 - N-Channel Power MOSFET

Key Features

  • ON-resistance RDS(on)=6.2Ω(typ. ).
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 600 ±30 1.5 6.0 1.0 20 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage.

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Datasheet Details

Part number SFT1440
Manufacturer onsemi
File Size 307.78 KB
Description N-Channel Power MOSFET
Datasheet download datasheet SFT1440 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1816A SFT1440 N-Channel Power MOSFET 600V, 1.5A, 8.1Ω, Single TP/TP-FA http://onsemi.com Features • ON-resistance RDS(on)=6.2Ω(typ.) • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 600 ±30 1.5 6.0 1.0 20 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.