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SFT1445 - N-Channel Power MOSFET

Key Features

  • ON-resistance RDS(on)1=85mΩ(typ. ).
  • Halogen free compliance.
  • Input Capacitance Ciss=1030pF(typ. ).
  • 4V drive.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 100 ±20 17.

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Datasheet Details

Part number SFT1445
Manufacturer onsemi
File Size 315.92 KB
Description N-Channel Power MOSFET
Datasheet download datasheet SFT1445 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1897A SFT1445 N-Channel Power MOSFET 100V, 17A, 111mΩ, Single TP/TP-FA http://onsemi.com Features • ON-resistance RDS(on)1=85mΩ(typ.) • Halogen free compliance • Input Capacitance Ciss=1030pF(typ.) • 4V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 100 ±20 17 68 1.0 35 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.