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  ON Semiconductor Electronic Components Datasheet  

SMF05T1 Datasheet

Quad Array

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SMF05T1
Quad Array for
ESD Protection
This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its quad junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
Specification Features
SC88A Package Allows Four Separate Unidirectional Configurations
Low Leakage < 5 mA @ 5 Volt
Breakdown Voltage: 6.1 Volt -- 7.2 Volt @ 1 mA
Low Capacitance (90 pF typical)
ESD Protection Meeting IEC61000--4--2
Pb--Free Packages are Available
Mechanical Characteristics
Void Free, Transfer--Molded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assemblywww.DataSheet4U.com
Small Package Size for High Density Applications
http://onsemi.com
SC--88A/SOT--323
CASE 419A
STYLE 5
MARKING
DIAGRAM
45
60 MG
G
1 23
60 = Device Marking
M = One Digit Date Code
G = Pb--Free Package
(Note: Microdot may be in either location)
1
Cathode
2
Anode
3
Cathode
5
Cathode
4
Cathode
ORDERING INFORMATION
Device
Package
Shipping
SMF05T1
SC--88A 3000/Tape & Reel
SMF05T1G
SC--88A 3000/Tape & Reel
(Pb--Free)
SMF05T2G
SC--88A 3000/Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 -- Rev. 3
1
Publication Order Number:
SMF05T1/D


  ON Semiconductor Electronic Components Datasheet  

SMF05T1 Datasheet

Quad Array

No Preview Available !

SMF05T1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation @ 8 X 20 ms @TA 25°C (Note 1)
Steady State Power -- 1 Diode (Note 2)
Thermal Resistance Junction to Ambient
Above 25°C, Derate
Ppk
PD
RθJA
200 W
385 mW
325 °C/W
3.1 mW/°C
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
ESD Discharge
IEC61000--4--2, Air Discharge
IEC61000--4--2, Contact Discharge
TJmax
TJ Tstg
150
--55 to +150
30
30
°C
°C
kV
Lead Solder Temperature (10 seconds duration)
TL 260 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
Device
Breakdown Voltage
VBR @ 1 mA (Volts)
Min Max
Leakage Current
IR @ VRWM = 5 V
(mA)
Capacitance
@ 0 V Bias
(pF)
Max
VF @ IF = 200 mA
(V)
Max Clamping
Voltage (VC)
@ IPP
IPP (A) VC (V)
SMF05
6.0
7.2
5.0
90 1.25 1.0 9.5
1. Non--repetitive current per Figure 1. Derate per Figure 2.
2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR--4 board with min pad.
Max Clamping
Voltage (VC)
@ IPP
IPP (A) VC (V)
12 12.5
1000
100
10
NOTE: Non--Repetitive Surge.
1
1 10 100
t, TIME (ms)
Figure 1. Pulse Width
100
90
tr
80
70
60
50
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
40
30 tP
20
10
1000 0 0
20 40
60 80
t, TIME (ms)
Figure 2. 8 × 20 ms Pulse Waveform
http://onsemi.com
2


Part Number SMF05T1
Description Quad Array
Maker ON Semiconductor
Total Page 4 Pages
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