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  ON Semiconductor Electronic Components Datasheet  

SMMBT3906LT3G Datasheet

PNP Transistor

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MMBT3906L, SMMBT3906L
General Purpose Transistor
PNP Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 3)
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
ICM
Value
−40
−40
−5.0
−200
−800
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @ TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) @ TA = 25°C
Derate above 25°C
RqJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg −65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. Reference SOA curve.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
2A M G
G
1
2A = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package Shipping
MMBT3906LT1G SOT−23 3,000 / Tape &
(Pb−Free)
Reel
MMBT3906LT3G
SMMBT3906LT1G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
3,000 / Tape &
Reel
SMMBT3906LT3G SOT−23 10,000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
1
August, 2017 − Rev. 13
Publication Order Number:
MMBT3906LT1/D


  ON Semiconductor Electronic Components Datasheet  

SMMBT3906LT3G Datasheet

PNP Transistor

No Preview Available !

MMBT3906L, SMMBT3906L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
−40
Collector −Base Breakdown Voltage
(IC = −10 mAdc, IE = 0)
V(BR)CBO
Vdc
−40
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
Vdc
−5.0
Base Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc)
IBL
nAdc
−50
Collector Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc)
ICEX
nAdc
−50
ON CHARACTERISTICS (Note 4)
DC Current Gain
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
HFE
60
80
100
300
60
30
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
Vdc
−0.25
−0.4
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat)
Vdc
−0.65 −0.85
−0.95
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
fT
MHz
250
Output Capacitance
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
pF
4.5
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
pF
10
Input Impedance
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hie
kW
2.0
12
hre
X 10− 4
0.1
10
Small −Signal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hfe
100
400
Output Admittance
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hoe
mmhos
3.0
60
Noise Figure
(IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
NF
dB
4.0
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = −3.0 Vdc, VBE = 0.5 Vdc,
IC = −10 mAdc, IB1 = −1.0 mAdc)
td
35
ns
tr
35
Storage Time
Fall Time
(VCC = −3.0 Vdc, IC = −10 mAdc,
IB1 = IB2 = −1.0 mAdc)
ts
225
ns
tf
75
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2


Part Number SMMBT3906LT3G
Description PNP Transistor
Maker ON Semiconductor
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