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  ON Semiconductor Electronic Components Datasheet  

SMMSD914 Datasheet

Switching Diode

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MMSD914, SMMSD914
Switching Diode
Features
SOD123 Surface Mount Package
High Breakdown Voltage
Fast Speed Switching Time
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Continuous Reverse Voltage
VR 100 Vdc
Peak Forward Current
IF 200 mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Nonrepetitive Peak
Forward Surge Current
Pulse Width =1 second
Pulse Width =1 micro second
IFSM
1.0
2.0
A
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation FR5 Board
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
JunctiontoAmbient
PD
RqJA
425 mW
3.4 mW/°C
°C/W
290
Junction and Storage Temperature Range
1. FR5 = 1.0oz Cu, 1.0inz pad
TJ, Tstg
55 to
+150
°C
http://onsemi.com
SOD123
CASE 425
PLASTIC
1
CATHODE
2
ANODE
MARKING DIAGRAM
1 5D M G 2
G
5D = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MMSD914T1G SOD123 3,000 / Tape & Reel
(PbFree)
SMMSD914T1G SOD123 3,000 / Tape & Reel
(PbFree)
MMSD914T3G
SMMSD914T3G
SOD123
(PbFree)
SOD123
(PbFree)
10,000 / Tape & Reel
10,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 Rev. 11
1
Publication Order Number:
MMSD914T1/D


  ON Semiconductor Electronic Components Datasheet  

SMMSD914 Datasheet

Switching Diode

No Preview Available !

MMSD914, SMMSD914
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 mAdc)
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
Forward Voltage (IF = 10 mAdc)
Diode Capacitance (VR = 0 Vdc, f = 1.0 MHz)
Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1)
Symbol
V(BR)
IR
VF
CD
trr
Min
100
Max
25
5.0
1000
4.0
4.0
Unit
Vdc
nAdc
mAdc
mVdc
pF
ns
+10 V
820 W
2k
100 mH
0.1 mF
IF
0.1 mF
tr tp
10%
t
IF
trr t
50 W OUTPUT
PULSE
GENERATOR
DUT
50 W INPUT
90%
SAMPLING
OSCILLOSCOPE
VR
INPUT SIGNAL
IR
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2


Part Number SMMSD914
Description Switching Diode
Maker ON Semiconductor
Total Page 4 Pages
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