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  ON Semiconductor Electronic Components Datasheet  

SMSD602-RT1G Datasheet

NPN General Purpose Amplifier Transistor Surface Mount

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MSD602-RT1G,
SMSD602-RT1G
Preferred Device
NPN General Purpose
Amplifier Transistor
Surface Mount
Features
AECQ101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
CollectorBase Voltage
V(BR)CBO
CollectorEmitter Voltage
V(BR)CEO
EmitterBase Voltage
V(BR)EBO
Collector Current Continuous
IC
Collector Current Peak
IC(P)
THERMAL CHARACTERISTICS
60
50
7.0
500
1.0
Vdc
Vdc
Vdc
mAdc
Adc
Characteristic
Symbol
Max
Unit
Power Dissipation
PD 200 mW
Junction Temperature
TJ 150 °C
Storage Temperature
Tstg 55 ~ +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
SC59
CASE 318D
STYLE 1
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
WR M G
G
WR = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MSD602RT1G SC59 3,000 / Tape & Reel
(PbFree)
SMSD602RT1G SC59 3,000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
July, 2012 Rev. 7
1
Publication Order Number:
MSD602RT1/D


  ON Semiconductor Electronic Components Datasheet  

SMSD602-RT1G Datasheet

NPN General Purpose Amplifier Transistor Surface Mount

No Preview Available !

MSD602RT1G, SMSD602RT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
CollectorEmitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
CollectorBase Breakdown Voltage
(IC = 10 mAdc, IE = 0)
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
CollectorBase Cutoff Current
(VCB = 20 Vdc, IE = 0)
DC Current Gain (Note 1)
(VCE = 10 Vdc, IC = 150 mAdc)
(VCE = 10 Vdc, IC = 500 mAdc)
CollectorEmitter Saturation Voltage
(IC = 300 mAdc, IB = 30 mAdc)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width 300 ms, D.C. 2%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
hFE1
hFE2
VCE(sat)
Cob
Min
50
60
7.0
120
40
Max Unit
Vdc
Vdc
Vdc
mAdc
0.1
240
Vdc
0.6
pF
15
http://onsemi.com
2


Part Number SMSD602-RT1G
Description NPN General Purpose Amplifier Transistor Surface Mount
Maker ON Semiconductor
Total Page 3 Pages
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