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  ON Semiconductor Electronic Components Datasheet  

SNZF220DFT1G Datasheet

EMI Filter

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NZF220DFT1G,
SNZF220DFT1G
EMI Filter with ESD
Protection
Features
2 EMI/RFI Bidirectional “Pi” LowPass Filters
ESD Protection Meets IEC6100042
Diode Capacitance: 7 10 pF
Zener/Resistor Line Capacitance: 22 ±20% pF
Low Zener Diode Leakage: 1 mA Maximum
Zener Breakdown Voltage; 6 8 V
AECQ101 Qualified and PPAP Capable SNZF220DFT1G
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These are PbFree Devices
Benefits
Designed to suppress EMI/RFI Noise in Systems Subjected to
Electromagnetic Interference
Nominal Cutoff Frequency of 220 MHz (per Figure 2)
Small Package Size Minimizes Parasitic Inductance, Thus a More
“Ideal” Low Pass Filtering Response
Typical Applications
Cellular Phones
Communication Systems
Computers
Portable Products with Input/Output Conductors
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Peak Power Dissipation (Note 1)
8 × 20 ms Pulse
PPK 14
W
Maximum Junction Temperature
TJ 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Between I/O Pins
© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 9
1
http://onsemi.com
CIRCUIT DESCRIPTION
Pin 4
Pin 5
Pin 3
Pin 2
(GND)
Pin 1
SC88A
DF SUFFIX
CASE 419A
MARKING DIAGRAM
54
FA D
G
1 23
FA = Specific Device Code
D = Date Code
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
NZF220DFT1G
SC88A 3000 / Tape &
(PbFree)
Reel
SNZF220DFT1G
SC88A 3000 / Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NZF220DFT1/D


  ON Semiconductor Electronic Components Datasheet  

SNZF220DFT1G Datasheet

EMI Filter

No Preview Available !

NZF220DFT1G, SNZF220DFT1G
ELECTRICAL CHARACTERISTICS
Symbol
Characteristic
VZ
Ir
VF
Capacitance
Zener Breakdown Voltage, @ IZT = 1 mA
Zener Leakage Current, @ VR = 3 V
Zener Forward Voltage, @ IF = 50 mA
Zener Internal Capacitance, @ 0 V Bias
Capacitance Zener/Resistor Array Line Capacitance
Resistor
Resistance
FC (Note 2) Cutoff Frequency
2. 50 W Source and 50 W Lead Termination per Figure 2.
Min Typ Max Unit
6.0 8.0 V
N/A 1.0 mA
N/A 1.5 V
7.0 10 pF
17.6 26.4 pF
90 110 W
220 MHz
Applications Information
Suppressing Noise at the Source
Filter all I/O signals leaving the noisy environment
Locate I/O driver circuits close to the connector
Use the longest rise/fall times possible for all digital signals
Reducing Noise at the Receiver
Filter all I/O signals entering the unit
Locate the I/O filters as close as possible to the connector
Minimizing Noise Coupling
Use multilayer PCBs to minimize power and ground inductance
Keep clock circuits away from the I/O connector
Ground planes should be used whenever possible
Minimize the loop area for all high speed signals
Provide for adequate power decoupling
ESD Protection
Locate the suppression devices as close to the I/O connector as possible
Minimize the PCB trace length to the suppression device
Minimize the PCB trace length for the ground return for the suppression device
http://onsemi.com
2


Part Number SNZF220DFT1G
Description EMI Filter
Maker ON Semiconductor
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