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  ON Semiconductor Electronic Components Datasheet  

SS14T3G Datasheet

Schottky Power Rectifier

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SS12, SS14
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
These devices employ the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with J−Bent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Stress Protection
Pb−Free Packages are Available
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 70 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 12 mm tape, 5000 units per 13 inch reel
Polarity: Cathode Lead Indicated by Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings: Human Body Model, 3B (> 8000 V)
Machine Model, B (> 200 V)
© Semiconductor Components Industries, LLC, 2005
1
July, 2005 − Rev. 3
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20, 40 VOLTS
SMA
CASE 403D
PLASTIC
MARKING DIAGRAM
SS1x
AYWWG
SS1x
x
A
Y
WW
G
= Specific Device Code
= 2 or 4
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
SS12T3
SMA
5000/Tape & Reel
SS12T3G
SS14T3
SMA
(Pb−Free)
SMA
5000/Tape & Reel
5000/Tape & Reel
SS14T3G
SMA
(Pb−Free)
5000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
SS12/D


  ON Semiconductor Electronic Components Datasheet  

SS14T3G Datasheet

Schottky Power Rectifier

No Preview Available !

SS12, SS14
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
VRWM
SS12
VR
20
SS14
40
Average Rectified Forward Current
(At Rated VR, TC = 120°C)
IO
1.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 120°C)
IFRM
2.0
A
Non−Repetitive Peak Surge Current
IFSM
60
A
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage/Operating Case Temperature
Tstg, TC
−55 to +150
°C
Operating Junction Temperature
TJ
−55 to +150
°C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
10,000
V/ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance,
Junction−to−Lead (Note 1)
Thermal Resistance,
Junction−to−Ambient (Note 1)
RqJL
RqJA
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
see Figure 2for other Values
VF
(IF = 1.0 A)
Maximum Instantaneous Reverse Current
see Figure 4 for other Values
IR
(VR = 20 V)
(VR = 40 V)
1. Mounted on 2 in Square PC Board with 1 in Square Total Pad Size, PC Board FR4.
2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2.0%.
Value
35
86
Unit
°C/W
TJ = 25°C
V
0.47
TJ = 25°C
TJ = 100°C
mA
0.045
2.0
0.1
5.0
10
10
TJ = 100°C
1
TJ = 150°C
TJ = 25°C
TJ = −55°C
0.1
0.10
0.30
0.50
0.70
0.90
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
TJ = 100°C
1
TJ = 150°C
TJ = 25°C
TJ = −55°C
0.1
0.10
0.30
0.50
0.70
0.90
VF, MAXIMUM FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
http://onsemi.com
2


Part Number SS14T3G
Description Schottky Power Rectifier
Maker ON Semiconductor
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SS14T3G Datasheet PDF






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