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  ON Semiconductor Electronic Components Datasheet  

STD25P03L Datasheet

Power MOSFET

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NTD25P03L, STD25P03L
Power MOSFET
−25 A, −30 V, Logic Level P−Channel DPAK
Designed for low voltage, high speed switching applications and to
withstand high energy in the avalanche and commutation modes.
The source−to−drain diode recovery time is comparable to a discrete
fast recovery diode.
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Typical Applications
PWM Motor Controls
Power Supplies
Converters
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp 10 ms)
Drain Current
− Continuous @ TA = 25°C
− Single Pulse (tp 10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VGS
VGSM
ID
IDM
PD
TJ, Tstg
−30
±15
±20
−25
−75
75
−55 to
+150
V
V
Vpk
A
Apk
W
°C
Single Pulse Drain−to−Source Avalanche
EAS 200 mJ
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
Peak IL = 20 Apk, L = 1.0 mH, RG = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
°C/W
1.65
67
120
Maximum Lead Temperature for Soldering
Purposes, (1/8 in from case for 10 seconds)
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
http://onsemi.com
V(BR)DSS
−30 V
RDS(on) Typ
51 mW @ 5.0 V
D
ID Max
−25 A
P−Channel
G
S
4
12
3
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
1
Gate
2
Drain
3
Source
A
Y
WW
25P03L
G
= Assembly Location*
= Year
= Work Week
= Device Code
= Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 5
1
Publication Order Number:
NTD25P03L/D


  ON Semiconductor Electronic Components Datasheet  

STD25P03L Datasheet

Power MOSFET

No Preview Available !

NTD25P03L, STD25P03L
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = −250 mA)
Temperature Coefficient (Positive)
V(BR)DSS
−30
−24
V
mV/°C
Zero Gate Voltage Drain Current
(VDS = −30 Vdc, VGS = 0 Vdc, TJ = 25°C)
(VDS = −30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current
(VGS = ±15 Vdc, VDS = 0 Vdc)
IDSS
IGSS
−1.0
−100
−100
mA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = −250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
−1.0
−1.6
4.0
V
−2.0
mV/°C
Static Drain−to−Source On−State Resistance
(VGS = −5.0 Vdc, ID = −12.5 Adc)
(VGS = −5.0 Vdc, ID = −25 Adc)
(VGS = −4.0 Vdc, ID = −10 Adc)
Forward Transconductance
(VDS = −8.0 Vdc, ID = −12.5 Adc)
RDS(on)
gFS
0.051
0.056
0.065
13
0.072
0.080
0.090
W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = −25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
900 1260 pF
290 410
105 210
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = −15 Vdc, ID = −25 A,
VGS = −5.0 V,
RG = 1.3 W)
td(on)
tr
td(off)
tf
9.0 20 ns
37 75
15 30
16 55
Gate Charge
(VDS = −24 Vdc,
VGS = −5.0 Vdc,
ID = −25 A)
QT
Q1
Q2
Q3
15 20 nC
3.0
9.0
7.0
BODY−DRAIN DIODE RATINGS (Note 3)
Diode Forward On−Voltage
(IS = −25 Adc, VGS = 0 V)
(IS = −25 Adc, VGS = 0 V, TJ = 125°C)
VSD
−1.0 −1.5
−0.9
V
Reverse Recovery Time
(IS = −25 A, VGS = 0 V,
dIS/dt = 100 A/ms)
trr
ta
tb
35 ns
20
14
Reverse Recovery Stored Charge
QRR
0.035
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2


Part Number STD25P03L
Description Power MOSFET
Maker ON Semiconductor
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