Intelligent Power Module (IPM)
600 V, 5 A
This “Inverter IPM” is highly integrated device containing all High Voltage
(HV) control from HV-DC to 3-phase outputs in a single SIP module (Single-In
line Package). Output stage uses IGBT/FRD technology and implements Under
Voltage Protection (UVP). Internal Boost diodes are provided for high side gate
Single control power supply due to Internal bootstrap circuit for high side
All control input and status output are at low voltage levels directly compatible
Built-in cross conduction prevention.
Externally accessible embedded thermistor for substrate temperature
UL1557 (File number: E339285)
Absolute Maximum Ratings at Tc = 25C
P to U-, V-, W-, surge < 500 V
P to U, V, W or U, V, W, to U-, V-, W-
P,U-,V-,W-,U,V,W terminal current
P,U-,V-,W-,U,V,W terminal current, Tc = 100C
Output peak current
Iop P,U-,V-,W-,U,V,W terminal current, P.W. = 1 ms
Input signal voltage
FLTEN terminal voltage
VB1 to U, VB2 to V, VB3 to W, VDD to VSS
HIN1, 2, 3, LIN1, 2, 3
0.3 to VDD
0.3 to VDD
Maximum power dissipation
IGBT per 1 channel
IGBT, FRD, Pre-Driver IC
40 to +125
Operating case temperature
20 to +100
A screw part
Vis 50 Hz sine wave AC 1 minute *4
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1: Surge voltage developed by the switching operation due to the wiring inductance between P and U-(V-, W-) terminal.
*2: Terminal voltage: VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = VDD to VSS.
*3: Flatness of the heat-sink should be 0.15 mm and below.
*4: Test conditions : AC 2500 V, 1 s.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
See detailed ordering and shipping information on page 15 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
September 2016 - Rev. 1
Publication Order Number :