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  ON Semiconductor Electronic Components Datasheet  

STK534U342C-E Datasheet

Intelligent Power Module

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STK534U342C-E
Intelligent Power Module (IPM)
600 V, 5 A
Overview
This “Inverter IPM” is highly integrated device containing all High Voltage
(HV) control from HV-DC to 3-phase outputs in a single SIP module (Single-In
line Package). Output stage uses IGBT/FRD technology and implements Under
Voltage Protection (UVP). Internal Boost diodes are provided for high side gate
boost drive.
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Function
Single control power supply due to Internal bootstrap circuit for high side
pre-driver circuit
All control input and status output are at low voltage levels directly compatible
with microcontrollers.
Built-in cross conduction prevention.
Externally accessible embedded thermistor for substrate temperature
measurement
Certification
UL1557 (File number: E339285)
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Symbol
Remarks
Ratings
Supply voltage
Collector-emitter voltage
VCC
VCE
P to U-, V-, W-, surge < 500 V
*1
P to U, V, W or U, V, W, to U-, V-, W-
450
600
Output current
P,U-,V-,W-,U,V,W terminal current
Io
P,U-,V-,W-,U,V,W terminal current, Tc = 100C
±5
±3
Output peak current
Iop P,U-,V-,W-,U,V,W terminal current, P.W. = 1 ms
±10
Pre-driver voltage
Input signal voltage
FLTEN terminal voltage
VD1,2,3,4
VIN
VFLTEN
VB1 to U, VB2 to V, VB3 to W, VDD to VSS
HIN1, 2, 3, LIN1, 2, 3
FLTEN terminal
*2
20
0.3 to VDD
0.3 to VDD
Maximum power dissipation
Pd
IGBT per 1 channel
27.7
Junction temperature
Tj
IGBT, FRD, Pre-Driver IC
150
Storage temperature
Tstg
40 to +125
Operating case temperature
Tc
IPM case
20 to +100
Tightening torque
A screw part
*3
0.9
Withstand voltage
Vis 50 Hz sine wave AC 1 minute *4
2000
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1: Surge voltage developed by the switching operation due to the wiring inductance between P and U-(V-, W-) terminal.
*2: Terminal voltage: VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = VDD to VSS.
*3: Flatness of the heat-sink should be 0.15 mm and below.
*4: Test conditions : AC 2500 V, 1 s.
Unit
V
V
A
A
A
V
V
V
W
C
C
C
Nm
VRMS
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 15 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
September 2016 - Rev. 1
1
Publication Order Number :
STK534U342C-E/D


  ON Semiconductor Electronic Components Datasheet  

STK534U342C-E Datasheet

Intelligent Power Module

No Preview Available !

STK534U342C-E
Electrical Characteristics at Tc = 25C, VD1, VD2, VD3, VD4 = 15 V
Parameter
Symbol
Conditions
Test
circuit
MIN
TYP
MAX Unit
Power output section
Collector-emitter cut-off current
Bootstrap diode reverse current
Collector to emitter saturation voltage
Diode forward voltage
Junction to case thermal resistance
ICE
IR(BD)
VCE = 600 V
VR(BD) = 600 V
VCE(SAT)
Io = 5 A, Tj = 25C
Io = 3 A, Tj = 100C
Io = 5 A, Tj = 25C
VF
Io = 3 A, Tj = 100C
θj-c(T) IGBT
θj-c(D) FWD
Fig.1
Fig.2
Fig.3
-
Control (Pre-driver) section
Pre-driver power dissipation
VD1,2,3 = 15 V
ID
VD4 = 15 V
High level Input voltage
Low level Input voltage
Logic 1 input leakage current
Logic 0 input leakage current
FLTEN terminal sink current
Vin H
Vin L
IIN+
IIN-
IoSD
FLTEN clearance delay time
FLTCLR
FLTEN Threshold
ITRIP threshold voltage
ITRIP to shutdown propagation delay
ITRIP blanking time
VCC and VBS supply undervoltage protection reset
VCC and VBS supply undervoltage protection set
VCC and VBS supply undervoltage hysteresis
VEN+
VEN-
VITRIP
tITRIP
tITRIPBL
VCCUV+
VBSUV+
VCCUV-
VBSUV-
VCCUVH
VBSUVH
HIN1,HIN2,HIN3,
LIN1,LIN2,LIN3 to VSS
VIN = +3.3 V
VIN = 0 V
FAULT:ON / VFLTEN=0.1 V
From time fault condition
clear
VEN rising
VEN falling
ITRIP(16) to VSS(29)
Reference voltage is “VSS” terminal voltage unless otherwise specified.
Fig.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
-
-
-
-
1.0
-
0.8
0.44
340
250
10.5
10.3
0.14
-
-
1.6
1.4
1.2
1.0
-
-
0.08
1.6
-
-
100
-
2
2.0
-
-
0.49
550
350
11.1
10.9
0.2
100 μA
100 μA
2.4
V
-
1.8
V
-
4.5
6 C /W
0.4
mA
4
-V
0.8 V
143 μA
2 μA
- mA
3.0 ms
2.5 V
-V
0.54 V
800 ns
- ns
11.7 V
11.5 V
-V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
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2


Part Number STK534U342C-E
Description Intelligent Power Module
Maker ON Semiconductor
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