SZESD7551 Datasheet - ON Semiconductor

SZESD7551 ESD Protection Diode

of survivability specs.  Semiconductor Components Industries, LLC, 2016 1 February, 2024 * Rev. 4 Publication Order Number: ESD7551/D ESD7551, SZESD7551 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamp.

DATA SHEET www.onsemi.com ESD Protection Diode Micro Packaged Diodes for ESD Protection ESD7551, SZESD7551 The ESD7551 is designed to protect voltage sensitive components that require ultra low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, the part is well suited for us.

SZESD7551 Features

* Ultra

* Low Capacitance (0.35 pF Max)

* Low Clamping Voltage

* Stand

* off Voltage: 3.3 V

* Low Leakage

* Response Time is < 1 ns

* Low Dynamic Resistance < 1 W

* Protection for the Following Standards: IEC 61000

* 4

* 2 (Level 4) & ISO 10605