Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- -4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V
RDS(ON) = 0.100 Ω @ VGS = -2.5 V
Fast switching speed. Low gate charge (7.2nC typical). High performance trench technology for extremely
low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick). S
D
1
D
2
G
D SuperSOT TM-6 D
3
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGSS ID
PD
Drain-Source Voltage Gate-Source Voltage Drain Current - Cont.
Si3443DV-ONSemiconductor.pdf
