Si3443DV
Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.
Applications Load switch Battery protection Power management
Features
-4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V
RDS(ON) = 0.100 Ω @ VGS = -2.5 V
Fast switching speed.
Low gate charge (7.2n C typical).
High performance trench technology for extremely low RDS(ON).
Super SOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
D Super SOT TM-6 D
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous Drain Current...
