TIP121 - Plastic Medium-Power Complementary Silicon Transistors

onsemi

Key Features

High DC Current Gain.
hFE = 2500 (Typ) @ IC = 4.0 Adc.
Collector.
Emitter Sustaining Voltage.
@ 100 mAdc VCEO(sus) = 60 Vdc (Min).
TIP120, TIP125 = 80 Vdc (Min).
TIP121, TIP126 = 100 Vdc (Min).
TIP122, TIP127.
Low Collector.
Emitter Saturation Voltage.
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc.
Monolithic Construction with Built.
In Base.
Emitter Shu.

TIP121 plastic medium-power complementary silicon transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	TIP121
Manufacturer	onsemi
File Size	297.68 KB
Description	Plastic Medium-Power Complementary Silicon Transistors
Datasheet	TIP121 Datasheet

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Other Datasheets by onsemi

Part Number	Description
TIP121G	NPN Transistor
TIP120	Plastic Medium-Power Complementary Silicon Transistors
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TIP122	Plastic Medium-Power Complementary Silicon Transistors
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Full PDF Text Transcription (Reference)

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Plastic Medium-Power Complementary Silicon Transistors TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* DATA SHEET www.onsemi.com 4 1 2 3 1. Base 2. Collector 3. Emitter 4.