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  ON Semiconductor Electronic Components Datasheet  

TIP121G Datasheet

NPN Transistor

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TIP120, TIP121, TIP122
(NPN); TIP125, TIP126,
TIP127 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for generalpurpose amplifier and lowspeed switching
applications.
Features
High DC Current Gain
hFE = 2500 (Typ) @ IC
= 4.0 Adc
CollectorEmitter Sustaining Voltage @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) TIP120, TIP125
= 80 Vdc (Min) TIP121, TIP126
= 100 Vdc (Min) TIP122, TIP127
Low CollectorEmitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
= 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
PbFree Packages are Available*
www.onsemi.com
DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
6080100 VOLTS, 65 WATTS
MARKING
DIAGRAM
1
2
3
4
TO220AB
CASE 221A
STYLE 1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
TIP12xG
AYWW
TIP12x
x
A
Y
WW
G
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 Rev. 9
Publication Order Number:
TIP120/D


  ON Semiconductor Electronic Components Datasheet  

TIP121G Datasheet

NPN Transistor

No Preview Available !

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
MAXIMUM RATINGS
Rating
TIP120, TIP121, TIP122,
Symbol
TIP125 TIP126 TIP127
Unit
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
Collector Current Continuous
Peak
VCEO
VCB
VEB
IC
60
80
100
Vdc
60
80
100
Vdc
5.0
Vdc
5.0
Adc
8.0
Base Current
Total Power Dissipation @ TC = 25°C
Derate above 25°C
IB
120
mAdc
PD
65
W
0.52
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
2.0
W
0.016
W/°C
Unclamped Inductive Load Energy (Note 1)
E
50
mJ
Operating and Storage Junction, Temperature Range
THERMAL CHARACTERISTICS
Characteristic
TJ, Tstg
Symbol
65 to +150
Max
°C
Unit
Thermal Resistance, JunctiontoCase
RqJC
1.92
°C/W
Thermal Resistance, JunctiontoAmbient
RqJA
62.5
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2)
(IC = 100 mAdc, IB = 0)
VCEO(sus)
Vdc
TIP120, TIP125
60
TIP121, TIP126
80
TIP122, TIP127
100
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
ICEO
mAdc
0.5
0.5
0.5
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
ICBO
mAdc
0.2
0.2
0.2
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 3.0 Adc, VCE = 3.0 Vdc)
CollectorEmitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc)
(IC = 5.0 Adc, IB = 20 mAdc)
IEBO
hFE
VCE(sat)
2.0
1000
1000
2.0
4.0
mAdc
Vdc
BaseEmitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc)
VBE(on)
2.5
Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
hfe
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127
Cob
TIP120, TIP121, TIP122
4.0
300
pF
200
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
www.onsemi.com
2


Part Number TIP121G
Description NPN Transistor
Maker ON Semiconductor
PDF Download

TIP121G Datasheet PDF






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