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TIP122 - Plastic Medium-Power Complementary Silicon Transistors

Download the TIP122 datasheet PDF. This datasheet also covers the TIP121 variant, as both devices belong to the same plastic medium-power complementary silicon transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High DC Current Gain.
  • hFE = 2500 (Typ) @ IC = 4.0 Adc.
  • Collector.
  • Emitter Sustaining Voltage.
  • @ 100 mAdc VCEO(sus) = 60 Vdc (Min).
  • TIP120, TIP125 = 80 Vdc (Min).
  • TIP121, TIP126 = 100 Vdc (Min).
  • TIP122, TIP127.
  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc.
  • Monolithic Construction with Built.
  • In Base.
  • Emitter Shu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TIP121-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TIP122
Manufacturer onsemi
File Size 297.68 KB
Description Plastic Medium-Power Complementary Silicon Transistors
Datasheet download datasheet TIP122 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Plastic Medium-Power Complementary Silicon Transistors TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* DATA SHEET www.onsemi.com 4 1 2 3 1. Base 2. Collector 3. Emitter 4.