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TIP42 Datasheet

PNP Epitaxial Silicon Transistor

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TIP42 / TIP42C
PNP Epitaxial Silicon Transistor
Features
• Medium Power Linear Switching Applications
• Complement to TIP41 Series
1 TO-220
1.Base 2.Collector 3.Emitter
Ordering Information
Part Number
TIP42
TIP42C
TIP42CTU
Top Mark
TIP42
TIP42C
TIP42C
Package
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
Packing Method
Bulk
Bulk
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
TIP42
TIP42C
-40
-100
V
VCEO
Collector-Emitter Voltage
TIP42
TIP42C
-40
-100
V
VEBO
IC
ICP
IB
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Junction Temperature
Storage Temperature Range
-5
-6
-10
-2
150
-65 to 150
V
A
A
A
°C
°C
© 2000 Semiconductor Components Industries, LLC.
November-2017, Rev. 2
Publication Order Number:
TIP42C/D


  ON Semiconductor Electronic Components Datasheet  

TIP42 Datasheet

PNP Epitaxial Silicon Transistor

No Preview Available !

Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
PC
Parameter
Collector Dissipation (TC = 25°C)
Collector Dissipation (TA = 25°C)
Value
65
2
Unit
W
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
VCEO(sus)
Collector-Emitter Sustaining TIP42
Voltage(1)
TIP42C
ICEO
Collector Cut-Off Current
TIP42
TIP42C
TIP42
ICES
Collector Cut-Off Current
TIP42C
IEBO Emitter Cut-Off Current
hFE DC Current Gain(1)
VCE(sat) Collector-Emitter Saturation Voltage(1)
VBE(on) Base-Emitter On Voltage(1)
fT Current Gain Bandwidth Product
Note:
1. Pulse test: pw 300 μs, duty cycle 2%.
Conditions
IC = -30 mA, IB = 0
VCE = -30 V, IB = 0
VCE = -60 V, IB = 0
VCE = -40 V, VEB = 0
VCE = -100 V, VEB = 0
VEB = -5 V, IC = 0
VCE = -4 V, IC = -0.3 A
VCE = -4 V, IC = -3 A
IC = -6 A, IB = -600 mA
VCE = -4 V, IC = -6 A
VCE = -10 V, IC = -500 mA,
f = 1 MHz
Min.
-40
-100
30
15
3.0
Max.
-0.7
-0.7
-400
-400
-1
75
-1.5
-2.0
Unit
V
mA
μA
mA
V
V
MHz
www.onsemi.com
2


Part Number TIP42
Description PNP Epitaxial Silicon Transistor
Maker ON Semiconductor
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