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TND322VD - Dual buffer driver

Key Features

  • Dual buffer Monolithic structure (High voltage CMOS process adopted).
  • Withstand voltage of 25V is assured.
  • Wide range of operating voltage : 4.5V to 25V.
  • Peak output current : IO+/IO--=0.8A /1A.
  • Fast switching time (30ns typical at 1000pF load).
  • Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V).
  • Built-in input pull-down resistance.
  • http://onsemi. com Specifications Absolute Maximum Ratings at Ta=25°C.

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Datasheet Details

Part number TND322VD
Manufacturer onsemi
File Size 315.76 KB
Description Dual buffer driver
Datasheet download datasheet TND322VD Datasheet

Full PDF Text Transcription for TND322VD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TND322VD. For precise diagrams, and layout, please refer to the original PDF.

Ordering number : ENA0520A TND322VD Excellent Power Device Dual buffer driver for general purpose, Dual VEC8 Features Dual buffer Monolithic structure (High voltage CMOS ...

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ual VEC8 Features Dual buffer Monolithic structure (High voltage CMOS process adopted) • Withstand voltage of 25V is assured • Wide range of operating voltage : 4.5V to 25V • Peak output current : IO+/IO--=0.8A /1A • Fast switching time (30ns typical at 1000pF load) • Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V) • Built-in input pull-down resistance • • http://onsemi.com Specifications Absolute Maximum Ratings at Ta=25°C Parameter Supply Voltage Input Voltage Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDD VIN PD max Tj Tstg Conditions Ratings 0 to 25 GND-0.3 to VD