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  ON Semiconductor Electronic Components Datasheet  

ULQ2003AG Datasheet

Darlington Transistor Arrays

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ULN2003A, ULQ2003A
High Voltage, High Current
Darlington Transistor Arrays
The seven NPN Darlington connected transistors in these arrays are
well suited for driving lamps, relays, or printer hammers in a variety of
industrial and consumer applications. Their high breakdown voltage
and internal suppression diodes insure freedom from problems
associated with inductive loads. Peak inrush currents to 500 mA
permit them to drive incandescent lamps.
The ULx2003A with a 2.7 kW series input resistor is well suited for
systems utilizing a 5.0 V TTL or CMOS Logic.
Features
ăThese are Pb-Free Devices
1/7 ULx2003A
2.7 k
Pin 9
5.0 k
3.0 k
Figure 1. Representative Schematic Diagram
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
(Top View)
Figure 2. Pin Connections
http://onsemi.com
16
1
SOIC-16
D SUFFIX
CASE 751B
A = Assembly Location
WL = Wafer Lot
Y = Year
WW = Work Week
G = Pb-Free Package
MARKING
DIAGRAMS
16
ULN2003AG
AWLYWW
1
16
ULQ2003AG
AWLYWW
1
ORDERING INFORMATION
Device
ULN2003ADR2G
Package
SOIC-16
(Pb-Free)
Shipping
2500 Tape & Reel
ULQ2003ADR2G SOIC-16 2500 Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2007
1
November, 2007 - Rev. 0
Publication Order Number:
ULN2003A/D


  ON Semiconductor Electronic Components Datasheet  

ULQ2003AG Datasheet

Darlington Transistor Arrays

No Preview Available !

ULN2003A, ULQ2003A
MAXIMUM RATINGS (TA = 25°C, and rating apply to any one device in the package, unless otherwise noted.)
Rating
Symbol
Value
Unit
Output Voltage
Input Voltage
Collector Current - Continuous
Base Current - Continuous
Operating Ambient Temperature Range
ULN2003A
ULQ2003A
VO
50
V
VI
30
V
IC
500
mA
IB
25
mA
TA
°C
-20 to +85
-40 to +85
Storage Temperature Range
Junction Temperature
Thermal Resistance, Junction-to-Ambient
Case 751B, D Suffix
Tstg
TJ
RqJA
-55 to +150
150
100
°C
°C
°C/W
Thermal Resistance, Junction-to-Case
Case 751B, D Suffix
RqJC
°C/W
20
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
ESD
V
2000
400
1500
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
http://onsemi.com
2


Part Number ULQ2003AG
Description Darlington Transistor Arrays
Maker ON Semiconductor
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ULQ2003AG Datasheet PDF






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