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  ON Semiconductor Electronic Components Datasheet  

VN2406L Datasheet

Small Signal MOSFET

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VN2406L
Preferred Device
Small Signal MOSFET
200 mAmps, 240 Volts
NChannel TO92
MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain Gate Voltage
Gate Source Voltage
Continuous
Nonrepetitive (tp 50 μs)
Continuous Drain Current
Pulsed Drain Current
Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/16from case for 10
seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
TJ, Tstg
Symbol
RθJA
TL
Value
240
240
± 20
± 40
200
500
350
2.8
Max
312.5
300
Unit
Vdc
Vdc
Vdc
Vpk
mAdc
mAdc
mW
mW/°C
°C
Unit
°C/W
°C
http://onsemi.com
200 mAMPS
240 VOLTS
RDS(on) = 6 Ω
NChannel
D
G
S
TO92
CASE 29
Style 22
123
MARKING DIAGRAM
& PIN ASSIGNMENT
VN2406L
YWW
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 4
1
Source
3
Drain
2
Gate
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
VN2406L
VN2406LZL1
TO92
TO92
1000 Units/Box
2000 Ammo Pack
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
VN2406L/D


  ON Semiconductor Electronic Components Datasheet  

VN2406L Datasheet

Small Signal MOSFET

No Preview Available !

VN2406L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
STATIC CHARACTERISTICS
Drain Source Breakdown Voltage
(VGS = 0, ID = 100 μA)
Zero Gate Voltage Drain Current
(VDS = 120 Vdc, VGS = 0)
(VDS = 120 Vdc, VGS = 0, TA = 125°C)
GateBody Leakage
(VDS = 0, VGS = ±15 V)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
OnState Drain Current (Note 1)
(VGS = 10 V, VDS 2.0 VDS(on))
DrainSource On Resistance (Note 1)
(VGS = 2.5 V, ID = 0.1 A)
(VGS = 10 V, ID = 0.5 A)
Forward Transconductance (Note 1)
(VDS = 10 V, ID = 0.5 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS
TurnOn Time
TurnOff Time
(VDD = 60 Vdc, ID = 0.4 A,
RL = 150 Ω, RG = 25 Ω)
1. Pulse Test; Pulse Width < 300 μs, Duty Cycle v 2.0%.
Symbol
Min
V(BR)DSS
IDSS
IGSS
VGS(th)
ID(on)
rDS(on)
gfs
240
0.8
1.0
300
Max
10
500
±100
2.0
10
6.0
Unit
Vdc
μAdc
nAdc
Vdc
Adc
Ω
mS
Ciss
Coss
Crss
t(on)
t(r)
t(off)
t(f)
125 pF
50 pF
20 pF
8.0 ns
8.0 ns
23 ns
34 ns
http://onsemi.com
2


Part Number VN2406L
Description Small Signal MOSFET
Maker ON Semiconductor
Total Page 3 Pages
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