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HCT802 Datasheet Preview

HCT802 Datasheet

Dual En hance ment Mode MOS FET

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Product Bulletin HCT802
September 1996
Dual Enhancement Mode MOSFET
Types HCT802, HCT802TX, HCT802TXV
Features
6 pad surface mount package
VDS = 90V
RDS(on) <5
ID(on) N-Channel = 1.5A
P-Channel = 1.1A
Two devices selected for VDS, ID(on)
and RDS(on) similarity
Full TX Processing Available
Gold plated contacts
Description
HCT802 offers an N-Channel and P-
Channel MOS transistor in a hermetic
ceramic surface mount package. The
devices used are similar to industry
standards 2N6661 N-Channel device
and VP1008 P-Channel device. These
two enhancement mode MOSFETS
are particularly well matched for VDS,
IDS(on), RDS(on) and Gfs.
Absolute Maximum Ratings
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 V
Drain Current (Limited by Tj max) N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A
P-Channel. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -55o C to +150o C
Power Dissipation
TA = 25o C (Both devices equally driven) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 W Total
TS = 25o C (Both devices equally driven). . . . . . . . . . . . . . . . . . . . . . . . . 1.5 W Total(1)
(Ts = Substrate that the package is soldered to)
Notes
(1) This rating is provided as an aid to designers. It is dependent upon mounting material and
methods and is not measureable as an outgoing test.
Order HCT802TX for processing per
MIL-PRF-19500. Typical screening
and lot acceptance tests are provided
on page 13-4. TX products receive a
VGS HTRB at 16 V for 48 hrs. at 150o
C and a VDS HTRB at 72 V for 160 hrs.
at 150o C.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-34
(972) 323-2200
Fax (972) 323-2396




OPTEK

HCT802 Datasheet Preview

HCT802 Datasheet

Dual En hance ment Mode MOS FET

No Preview Available !

Types HCT802, HCT802TX, HCT802TXV
Electrical Characteristics (TA = 25o C unless specified otherwise)
Symbol
Parameters
Device Min Max Units
B=Both
Test Conditions
BVDSS Drain-Source Breakdown
B 90*
V ID = 10 µA*, VGS = 0
VTH Gate Threshold Voltage
N 0.75 2.5 V VGS = VDS, ID = 1 mA
P -2.0 -4.5 V ID = -1 mA
IGSS Gate-Body Leakage
B ±100 nA VGS = ± 20 V, VDS = 0
IDSS Zero Gate Voltage Drain Current
B
B
10*
500*
µA VDS = 90 V*, VGS = 0 V
µA Tj = 150o C
ID(on) On-State Drain Current
N 1.5
A VDS = 25 V, VGS = 10 V
P -1.1
A VDS = -15 V, VGS = -10 V
RDS(on) Drain-Source on Resistance
B
5 VGS = 10 V*, ID = 1 A*
Gfs Forward Transconductance
N 170
mmho VDS = 25 V, ID = 0.5 A
P 200
mmho VDS = -10 V, ID = -0.5 A
CISS Input Capacitance
N 70 pf VDS = 25 V, VGS = 0 V, f = 1 MHz
P 150 pf VDS = -25 V, VGS = 0 V, f = 1 MHz
COSS Common Source Output Capaci-
tance
N
P
40 pf VDS = 25 V, VGS = 0 V, f = 1 MHz
60 pf VDS = -25 V, VGS = 0 V, f = 1 MHz
CRSS Reverse Transfer Capacitance
N
10 pf VDS = 25 V, VGS = 0 A, f = 1 MHz
P 25 pf VDS = -25 V, VGS = 0 A, f = 1 MHz
t(on) Turn-on-time
N 15 ns VDD = 25 V, ID = 1 A, RL = 50
P 50 ns VDD = -25 V, ID = -0.5 A, RL = 50
t(off) Turn-off-time
N 17 ns VDD = 25 V, ID = 1 A, RL = 50
P 50 ns VDD = -25 V, ID = -0.5 A, RL = 50
* Reverse polarity for P-Channel device
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
15-35


Part Number HCT802
Description Dual En hance ment Mode MOS FET
Maker OPTEK
Total Page 2 Pages
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