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OPTEK Technologies

OP200 Datasheet Preview

OP200 Datasheet

Infrared Light Emitting Diode

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Infrared Light Emitting Diode
in Miniature SMD Package
OP200
Flat Lens
High Power
0805 Package Size
880nm Wavelength
www.DataSheet4U.com
The OP200 is a GaAlAs infrared LEDs mounted in a miniature SMT package. The device incorporates a flat
molded lens which enables a wide beam angle and provides an even emission pattern. This device is packaged
in a 0805 size chip carrier that is compatible with most automated mounting equipment. The OP200 is mechani-
cally and spectrally matched to the OP520 series phototransistors.
Applications
Non-Contact Position Sensing
Datum detection
Machine automation
Optical encoders
100%
Relative Radiant Intensity vs.
Angular Displacement
80%
60%
40%
20%
0%
-90
-60 -30 0 30 60 90
Angular Displacement (Degrees)
OP200
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Pb
RoHS
A subsidiary of
TT electronics plc




OPTEK Technologies

OP200 Datasheet Preview

OP200 Datasheet

Infrared Light Emitting Diode

No Preview Available !

SMD Infrared LED
OP200
Absolute Maximum Ratings
TA = 25o C unless otherwise noted
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature
Reverse Voltage
Continuous Forward Current
Power Dissipation
www.DataSheeNt4oUte.sc:om
1. Solder time less than 5 seconds at temperature extreme.
2. De-rate linearly at 2.17 mW/° C above 25° C.
-40° C to +85° C
-25° C to +85° C
260° C(1)
30 V
50 mA
130 mW(2)
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
CONDITIONS
Ee(APT)
Apertured Radiant Incidence
0.2
mW/cm2 IF = 20mA(3)
VF Forward Voltage
1.5 V IF = 20mA
IR Reverse Current
100 µA VR = 2.0V
λP Peak Emission Wavelength
890 nm IF = 10mA
ΘHP Emission Angle at Half Power Points
100
Deg. IF = 20mA
tr, tf Rise and Fall Time
500 ns IF(PEAK) = 100mA, PW = 10µs, 10% D.C.
3. Ee(APT) is a measurement of the apertured radiant incidence upon a sensing area 0.081” (2.06mm) in diameter, perpendicular to and cen-
tered on the mechanical axis of the lens, and 0.590” (14.99mm) from the measurement surface. Ee(APT) is not necessarily uniform within
the measured area.
Relative Radiant Intensity vs.
Forward Current vs. Temperature
350%
Normalized at IF = 20mA,
TA = 20°C. Temperatures
stepped in 20°C Increments
300%
-40°C
250%
200%
Forward Voltage vs. Forward
Current vs. Temperature
1.5 Temperatures stepped
in 20 °C Increments
-40°C
1.4
1.3
150%
100%
50%
100°C
1.2
1.1
100°C
0 10 20 30 40 50
Forward Current (mA)
1.0
0
10 20 30 40
Forward Current (mA)
50
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Issue 1.1 07.05
Page 2 of 3


Part Number OP200
Description Infrared Light Emitting Diode
Maker OPTEK Technologies
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OP200 Datasheet PDF





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