OP800SL
OP800SL is NPN Silicon Phototransistors manufactured by OPTEK Technologies.
Types OP800SL thru OP805SL
Electrical Characteristics (TA= 25' C unless otherwise noted)
SYMBOL
PARAMETER
I I c ( o ~ ) On-State Collector Current
MIN TYP MAX UNITS
OP800SL 0.5 OP801SL 0.5
1 3.0 m A m A
TEST CONDITIONS
ICEO Collector Dark Current V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO Collector-Base Breakdown Voltage
I V(BR)ECO Emitter-Collector Breakdown Voltage
1 V(BR)EBO Emitter-Base Breakdown Voltage
1 VCE(SAT) Collector-Emitter Saturation Voltage
I 1tr Rise Time tf Fall Time
30 30 5.0 5.0
100 n A V C E = I O V , E ~ = O
V. l c = 1 0 0 p A
V lc=100p A
V I~=100p A
V I~=100p A
I0.40 V Ic = 0.4 m A, Ee= 5 m ~ / c m ~ ( ~ ) ps Vcc = 5 V, Ic = 0.80 m A, ps RL = I 0 0 R, See Test Circuit
Typical Performance Curves
Collector Dark Current vs. Ambient Temperature
- VCE= IOV
/
Normalized Collector Current vs. Ambient Temperature
Collector Current vs. lrradiance
-I
VCE 5.0 V
- LIGHT SOURCE IS UNFILTERED-
TUNGSTEN AT 2870°K
I 0 20 40 60 80 100 120 140
- AMBIENT TEMPERATURE
- C'
Rise and Fall Time vs. Load Resistance
-vcc 5 v
- -VRL 1 v -FREOUENCY 100 Hz -PULSE WIDTH 1 ms --LED OP290C -X 890...