OPE5587 Description
High Speed GaAlAs Infrared Emitter C C The OPE5587 is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 880nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1-3/4 package and has narrow beam angle with lensed package and cup...
OPE5587 Key Features
- Ultra high-speed : 25ns rise time
- 880nm wavelength
- Narrow beam angle
- Low forward voltage
- High power and high reliability
- Available for pulse operating