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FQB200N04 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: OuCan

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Datasheet Details

Part number FQB200N04
Manufacturer OuCan
File Size 290.78 KB
Description N-Channel Enhancement Mode Power MOSFET
Download FQB200N04 Download (PDF)

General Description

The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Overview

FQB200N04 N-Channel Enhancement Mode Power MOSFET.

Key Features

  • VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V (Typ:2.0mΩ).
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation Schematic diagram.

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