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FQB200N04 - N-Channel Enhancement Mode Power MOSFET

The FQB200N04 by OuCan is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

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FQB200N04 N-Channel Enhancement Mode Power MOSFET by OuCan - Datasheet Preview — Official preview page of the FQB200N04 N-Channel Enhancement Mode Power MOSFET datasheet (OuCan).

Datasheet Details

Part number	FQB200N04
Manufacturer	OuCan
File Size	290.78 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	FQB200N04-OuCan.pdf
Additional preview pages of the FQB200N04 datasheet.

FQB200N04 Product details

Description

The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V (Typ:2.0mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Schematic diagram.

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Published: Jan 29, 2019 |