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FQD20N10 - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Power MOSFET.
  • 100 % UIS Tested.

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Datasheet preview – FQD20N10

Datasheet Details

Part number FQD20N10
Manufacturer OuCan
File Size 146.43 KB
Description N-Channel MOSFET
Datasheet download datasheet FQD20N10 Datasheet
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Full PDF Text Transcription

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N-Channel 100-V (D-S) MOSFET FQD20N10 PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 100 0.075 at VGS = 10 V ID (A)a 20 Qg (Typ) 31 nC TO-252 FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Primary Side Switch D RoHS COMPLIANT GDS Top View Drain Connected to Tab Ordering Information: SUD35N10-26P-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.
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