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FQP7N60 Datasheet 7A N-Channel MOSFET

Manufacturer: OuCan

Datasheet Details

Part number FQP7N60
Manufacturer OuCan
File Size 509.20 KB
Description 7A N-Channel MOSFET
Download FQP7N60 Download (PDF)

General Description

Product Summary The FQP7N60 & FQPF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 700V@150℃ 7A < 1.2Ω TO-220 Top View TO-220F D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol FQP7N60 FQPF7N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 7 7* 4.8 4.8* 28 3 135 270 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 192 38.5 1.54 0.3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS FQP7N60 65 0.5 FQPF7N60 65 -- Maximum Junction-to-Case RθJC 0.65 3.25 * Drain current limited by maximum junction temperature.

Overview

FQP7N60-FQPF7N60 600V,7A N-Channel MOSFET General.