Datasheet Details
| Part number | FR1N10 |
|---|---|
| Manufacturer | OuCan |
| File Size | 209.51 KB |
| Description | 100V N-Channel MOSFET |
| Download | FR1N10 Download (PDF) |
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| Part number | FR1N10 |
|---|---|
| Manufacturer | OuCan |
| File Size | 209.51 KB |
| Description | 100V N-Channel MOSFET |
| Download | FR1N10 Download (PDF) |
|
|
|
Product Summary The AOH3110 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 1.0A < 700mΩ < 820mΩ SOT223 D Top View Bottom View D D S D G G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=50uH C EAS TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 1 0.8 4 3.5 0.3 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 33 60 Maximum Junction-to-Lead Steady-State RθJL 30 Max 40 75 40 Units V V A A mJ W °C Units °C/W °C/W °C/W Page 1 of 5 AOH3110/FR1N10 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 V IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.7 2.3 2.9 V ID(ON) On state drain current VGS=10V, VDS=5V 4 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.9A TJ=125°C 585 700 mΩ 1110 1340 VGS=4.5V, ID=0.75A 635 820 mΩ gFS Forward Transconductance VDS=5V, ID=0.9A 2.8 S VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G 0.9 1.2 V 1 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Trans
AOH3110/FR1N10 100V N-Channel MOSFET General.
| Part Number | Description |
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