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Oucan Semi

FQD60N0 Datasheet Preview

FQD60N0 Datasheet

N-Channel MOSFET

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Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
FQD60N03
Max.
30
± 20
56
35
200
50
25
0.33
-55 to + 175
300 (1.6mm from case)
Units
V
A
W
W/°C
°C
Typ.
–––
–––
–––
Max.
3.0
50
110
Units
°C/W
1




Oucan Semi

FQD60N0 Datasheet Preview

FQD60N0 Datasheet

N-Channel MOSFET

No Preview Available !

Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30 ––– –––
––– 0.023 –––
––– 7.8 9.8
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 15A
VGS(th)
VGS(th)/TJ
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
–––
1.35
–––
11
1.80
-5.0
13.5
2.25
–––
VGS = 4.5V, ID = 12A
V VDS = VGS, ID = 25µA
mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
71 ––– –––
––– 9.6 14
S VDS = 15V, ID = 12A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 2.6 –––
––– 0.90 –––
––– 3.5 –––
––– 2.6 –––
VDS = 15V
nC VGS = 4.5V
ID = 12A
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 4.4 –––
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 5.8 ––– nC VDS = 15V, VGS = 0V
––– 8.0 –––
VDD = 16V, VGS = 4.5V
––– 11 –––
ID = 12A
––– 12 ––– ns Clamped Inductive Load
tf Fall Time
––– 3.3 –––
Ciss Input Capacitance
––– 1150 –––
VGS = 0V
Coss Output Capacitance
––– 260 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 120 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
™EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
40
12
5.0
Units
mJ
A
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 56
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
––– ––– 200
A showing the
integral reverse
G
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
p-n junction diode.
S
––– ––– 1.0 V TJ = 25°C, IS = 10A, VGS = 0V
––– 25 38 ns TJ = 25°C, IF = 12A, VDD = 15V
––– 17 26 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)


Part Number FQD60N0
Description N-Channel MOSFET
Maker Oucan Semi
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FQD60N0 Datasheet PDF






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