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Oucan Semi

FQP7N65 Datasheet Preview

FQP7N65 Datasheet

7A N-Channel MOSFET

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FQP7N65/FQPF7N65
650V, 7A N-Channel MOSFET
General Description
Product Summary
The FQP7N65 & FQPF7N65 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
750V@150
7A
< 1.56
TO-220
Top View
TO-220F
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FAQOPT7N65
FAQOPTF7N65
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
7 7*
4.4 4.4*
24
3.4
173
347
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
192 38.5
1.5 0.3
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
FQP7N65
65
0.5
FQPF7N65
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.65
3.25
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6




Oucan Semi

FQP7N65 Datasheet Preview

FQP7N65 Datasheet

7A N-Channel MOSFET

No Preview Available !

FQP7N65/FQPF7N65
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=650V, VGS=0V
VDS=520V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=3.5A
gFS Forward Transconductance
VDS=40V, ID=3.5A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
650
750
0.74
1
10
±100
3 4 4.5
1.3 1.56
8
0.75 1
7
24
V
V/ oC
µA
nΑ
V
S
V
A
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
710 887 1060
60 77 92
5.5 7
9
1.9 3.8 5.8
pF
pF
pF
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
15 19 23
Gate Source Charge
VGS=10V, VDS=520V, ID=7A
4 4.9 6
Gate Drain Charge
6.5 8.3 10
Turn-On DelayTime
22 31
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=325V, ID=7A, RG=25
47 66
54 76
Turn-Off Fall Time
37 52
Body Diode Reverse Recovery Time IF=7A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Charge IF=7A,dI/dt=100A/µs,VDS=100V
220 280 340
3 4.2 5
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.4A, VDD=150V, RG=25, Starting TJ=25°C
Page 2 of 6


Part Number FQP7N65
Description 7A N-Channel MOSFET
Maker Oucan Semi
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FQP7N65 Datasheet PDF






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