Datasheet Details
| Part number | FQPF8N80 |
|---|---|
| Manufacturer | Oucan Semi |
| File Size | 332.06 KB |
| Description | 7.4A N-Channel MOSFET |
| Download | FQPF8N80 Download (PDF) |
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Download the FQPF8N80 datasheet PDF. This datasheet also includes the FQP8N80 variant, as both parts are published together in a single manufacturer document.
| Part number | FQPF8N80 |
|---|---|
| Manufacturer | Oucan Semi |
| File Size | 332.06 KB |
| Description | 7.4A N-Channel MOSFET |
| Download | FQPF8N80 Download (PDF) |
|
|
|
Product Summary The FQP8N80 & FQPF8N80 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 900V@150℃ 7.4A < 1.63Ω D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
FQP8N80 FQPF8N80 800 ±30 7.4 7.4* 4.6 4.6* 26 3.8 217 433 5 245 50 2.0 0.4 -55 to 150 300 FQP8N80 65 0.5 0.51 FQPF8N80 65 -2.5 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Page 1 of 6 FQP8N80/FQPF8N80 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C 800 900 V BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250µA, VGS=0V 0.86 V/ oC IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forwar
FQP8N80/FQPF8N80 800V, 7.4A N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FQPF8N80C | 800V N-Channel MOSFET | Fairchild Semiconductor |
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