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2SC1393 Datasheet Preview

2SC1393 Datasheet

NPN Silicon Epitaxial Planar Transistor

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ST 2SC1393
NPN Silicon Epitaxial Planar Transistor
TV VHF TUNER RF AMPLIFIER
(FORWARD AGC)
The transistor is subdivided into three group, R, O
and Y, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Value
30
30
4
20
250
150
- 55 to + 150
Unit
V
V
V
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
DC Current Gain
at VCE = 10 V, IC = 2 mA
Current Gain Group R
O
Y
hFE
hFE
hFE
Collector Base Cutoff Current
at VCB = 20 V
ICBO
Collector Base Breakdown Voltage
at IC = 10 µA
V(BR)CBO
Collector Emitter Breakdown Voltage
at IC = 5 mA
V(BR)CEO
Emitter Base Breakdown Voltage
at IE = 10 µA
V(BR)EBO
AGC Current
IE at Gpe = -30 dB, f = 200 MHz
IAGC
Reverse Transfer Capacitance
at VCB = 10 V, f = 1 MHz
Cre
Current Gain Bandwidth Product
at VCE = 10 V, IC = 3 mA
fT
Power Gain
at VCE = 10 V, f = 200 MHz, RS = 50 , IE = -3 mA
Gpe
Noise Figure
at VCE = 10 V, IE= -3 mA, f = 200 MHz, RS = 50
NF
Min.
40
60
90
-
30
30
4
-
-
400
20
-
Typ.
-
-
-
-
-
-
-
-10
0.35
700
24
2.0
Max.
80
140
180
0.1
-
-
-
-12
0.5
-
-
3.0
Unit
-
-
-
µA
V
V
V
mA
pF
MHz
dB
dB
Dated : 16/06/2004


Part Number 2SC1393
Description NPN Silicon Epitaxial Planar Transistor
Maker PACO
Total Page 1 Pages
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