A928
ST 2SA928
PNP Silicon Epitaxial Planar Transistor for audio power amplifier
The transistor is subdivided into two groups, O and Y, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
-VCBO -VCEO -VEBO
-IC 2 Ptot 1 Tj 150 Tstg
1. Emitter 2. Collector 3. Base TO-92 Plastic Package
Value 30 30 5
- 55 to + 150
Unit V V V A W OC OC
Characteristics at Ta = 25 OC
Parameter Symbol
DC Current Gain at -VCE = 2 V, -IC = 500 m A
Current
Collector Base Cutoff Current at -VCB = 30 V
Emitter Base Cutoff Current at -VEB = 5 V
Gain Group O Y h FE h FE -ICBO
- -IEBO
Collector Base Breakdown Voltage at -IC = 100 µA
-V(BR)CBO
Collector Emitter Breakdown Voltage at -IC = 10 m A
-V(BR)CEO
Emitter Base Breakdown Voltage at -IE = 1 m A
-V(BR)EBO
Collector Emitter Saturation Voltage at -IC = 1.5 A, -IB = 30 m...
