1N5221B~1N5266B
SILICON ZENER DIODES
VOLTAGE 2.4 to 68 Volt
POWER
500 mWatt
FEATURES
• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
• Lead free in compliance with EU RoHS 2011/65/EU directive
MECHANICAL DATA
• Case: Molded Glass DO-35
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.005 ounces, 0.13 grams
• Ordering information: Suffix : “ -35 ” to order DO-35 Package
• Packing information
B - 2K per Bulk box
T/R - 10K per 15" plastic Reel
T/B - 5K per horiz. tape & Ammo box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Power Dissipation at TA= 25OC
PTOT
Junction Temperature
TJ
Storage Temperature Range
TSTG
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
Value
500
175
-65 to +175
Units
mW
OC
OC
Parameter
Symbol
Min.
Thermal Resistance Junction to Ambient Air
RθJA
--
Forward Voltage at IF = 200mA
V --
F
*Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
Typ.
--
--
Max.
0.3*
1.1
Units
oC/mW
V
October 6,2015-REV.05
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