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PAN JIT

MMBZ5225BTW Datasheet Preview

MMBZ5225BTW Datasheet

SURFACE MOUNT SILICON ZENER DIODES

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MMBZ5221BTW~MMBZ5262BTW
SURFACE MOUNT SILICON ZENER DIODES
VOLTAGE 2.4 to 51 Volts POWER 200 mWatts
FEATURES
• Planar Die Construction
• 200mW Power Dissipation
• Zener Voltages from 2.4~51V
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-363, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0002 ounces, 0.006 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ=25OC unless otherwise noted)
PARAMETER
Power Dissipation (Note A)
Peak Forward Surge Current,8.3ms single half sine-wave superimposed on rated
load (JEDEC method) (Notes B)
Operating Junction Temperature and Storage Temperature Range
SYMBOL
PD
IFS M
TJ ,TSTG
VALUE
200
2.0
-55 to +150
UNITS
mW
A
OC
NOTES:
A. Mounted on 5.0mm2 (.013mm thick) land areas.
B. Me asured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum.
October 06,2011-REV.02
PAGE . 1




PAN JIT

MMBZ5225BTW Datasheet Preview

MMBZ5225BTW Datasheet

SURFACE MOUNT SILICON ZENER DIODES

No Preview Available !

MMBZ5221BTW~MMBZ5262BTW
Nominal Zener Voltage
Part Number
Nom. V
V Z @ IZT
Min. V
Max. V
200 mWatts Zener Diodes
MMBZ5221BTW 2.4 2.28 2.52
MMBZ5222BTW 2.5 2.38 2.63
MMBZ5223BTW 2.7 2.57 2.84
MMBZ5224BTW 2.8 2.66 2.94
MMBZ5225BTW 3.0 2.85 3.15
MMBZ5226BTW 3.3 3.14 3.47
MMBZ5227BTW 3.6 3.42 3.78
MMBZ5228BTW 3.9 3.71 4.10
MMBZ5229BTW 4.3 4.09 4.52
MMBZ5230BTW 4.7 4.47 4.94
MMBZ5231BTW 5.1 4.85 5.36
MMBZ5232BTW 5.6 5.32 5.88
MMBZ5233BTW 6.0 5.70 6.30
MMBZ5234BTW 6.2 5.89 6.51
MMBZ5235BTW 6.8 6.46 7.14
MMBZ5236BTW 7.5 7.13 7.88
MMBZ5237BTW 8.2 7.79 8.61
MMBZ5238BTW 8.7 8.27 9.14
MMBZ5239BTW 9.1 8.65 9.56
MMBZ5240BTW 10 9.50 10.50
MMBZ5241BTW
11
10.45
11.55
MMBZ5242BTW
12
11.40
12.60
MMBZ5243BTW
13
12.35
13.65
MMBZ5244BTW
14
13.30
14.70
MMBZ5245BTW
15
14.25
15.75
MMBZ5246BTW
16
15.20
16.80
MMBZ5247BTW
17
16.15
17.85
MMBZ5248BTW
18
17.10
18.90
MMBZ5249BTW
19
18.05
19.95
MMBZ5250BTW
20
19.00
21.00
MMBZ5251BTW
22
20.90
23.10
MMBZ5252BTW
24
22.80
25.20
MMBZ5253BTW
25
23.75
26.25
MMBZ5254BTW
27
25.65
28.35
MMBZ5255BTW
28
26.60
29.40
MMBZ5256BTW
30
28.50
31.50
MMBZ5257BTW
33
31.35
34.65
MMBZ5258BTW
36
34.20
37.80
MMBZ5259BTW
39
37.05
40.95
MMBZ5260BTW
43
40.85
45.15
MMBZ5261BTW
47
44.65
49.35
MMBZ5262BTW
51
48.45
53.55
October 06,2011-REV.02
Max. Zener Impedance
ZZT @ IZT
Ω mA
ZZK @ IZK
Ω mA
30 20.0 1200 0.25
30 20.0 1250 0.25
30 20.0 1300 0.25
30 20.0 1400 0.25
30 20.0 1600 0.25
28 20.0 1600 0.25
24 20.0 1700 0.25
23 20.0 1900 0.25
22 20.0 2000 0.25
19 20.0 1900 0.25
17 20.0 1600 0.25
11 20.0 1600 0.25
7 20.0 1600 0.25
7 20.0 1000 0.25
5 20.0 750 0.25
6 20.0 500 0.25
8 20.0 500 0.25
8 20.0 600 0.25
10 20.0 600 0.25
17 20.0 600 0.25
22 20.0 600 0.25
30 20.0 600 0.25
13 9.5 600 0.25
15 9.0 600 0.25
16 8.5 600 0.25
17 7.8 600 0.25
19 7.5 600 0.25
21 7.0 600 0.25
23 6.6 600 0.25
25 6.2 600 0.25
29 5.6 600 0.25
33 5.2 600 0.25
35 5.0 600 0.25
41 5.0 600 0.25
44 4.5 600 0.25
49 4.2 600 0.25
58 3.8 700 0.25
70 3.4 700 0.25
80 3.2 800 0.25
93 3.0 900 0.25
105
2.7
1000
0.25
125
2.5
1100
0.25
Max Reverse
Leakage Current
IR @ VR
μA V
Marking
Code
100 1.0 C1
100 1.0 C2
75 1.0 C3
75 1.0 C4
50 1.0 C5
25 1.0 D1
15 1.0 D2
10 1.0 D3
5.0 1.0 D4
5.0 2.0 D5
5.0 2.0 E1
5.0 3.0 E2
5.0 3.5 E3
5.0 4.0 E4
3.0 5.0 E5
3.0 6.0 F1
3.0 6.5 F2
3.0 6.5 F3
3.0 7.0 F4
3.0 8.0 F5
2.0 8.4 H1
1.0 9.1 H2
0.5 9.9 H3
0.1 10.5 H4
0.1 11.0 H5
0.1 12.0 J1
0.1 13.0 J2
0.1 14.0 J3
0.1 14.0 J4
0.1 15.0 J5
0.1 17.0 K1
0.1 18.0 K2
0.1 19.0 K3
0.1 21.0 K4
0.1 21.0 K5
0.1 23.0 M1
0.1 25.0 M2
0.1 27.0 M3
0.1 30.0 M4
0.1 33.0 M5
0.1 36.0 N1
0.1 39.0 N2
PAGE . 2


Part Number MMBZ5225BTW
Description SURFACE MOUNT SILICON ZENER DIODES
Maker PAN JIT
Total Page 5 Pages
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