PANJIT International SIC04A065ND
SILICON CARBIDE SCHOTTKY DIODE
FEATURES
● Temperature Independent Switching Behavior● Low Conduction and Switching Loss
● High Surge Current Capability
● Positive Temperature Coefficient on VF
● Fast Reverse Recovery
MECHANICAL DATA
● Case: Molded plastic, TO-263● Marking: 04A065ND Benefits
● High Frequency Operation
● Higher System Efficiency
● Environmental Protection
● Parallel Device Convenience
● Hard Switching & High Reliability
● High Temperature Application TO-263 Unit: inch(mm)
MAXIMUM RATINGS
PARAMETER Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current (TP=10mS, Half Sine Wave, D=0.1) SYMBOL VRRM VRSM VR IF(AV) IFRM TEST CONDITIONS TJ=25oC TJ=25oC TJ=25oC TC=25oC TC=125oC TC=150oC TC=25oC TC=125oC VALUE 650 650 650 11 6 4 26 23 UNITS V V V A A A A A June 13,2016-REV.00 Page 1 SiC04A065NDMAXIMUM RATINGS
PARAMETER Non-Repetitive Peak Forward Surge Current (TP=10mS, Half Sine Wave) Non-Repetitive Peak Forw...