PANJIT International SIC04A065T
SILICON CARBIDE SCHOTTKY DIODE
FEATURES
● Temperature Independent Switching Behavior● Low Conduction and Switching Loss
● High Surge Current Capability
● Positive Temperature Coefficient on VF
● Fast Reverse Recovery
MECHANICAL DATA
● Case: Molded plastic, TO-220AC● Marking: 04A065T Benefits
● High Frequency Operation
● Higher System Efficiency
● Environmental Protection
● Parallel Device Convenience
● Hard Switching & High Reliability
● High Temperature Application TO-220AC Unit: inch(mm)
MAXIMUM RATINGS
PARAMETER Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current (TP=10mS, Half Sine Wave, D=0.1) SYMBOL VRRM VRSM VR IF(AV) IFRM TEST CONDITIONS TJ=25oC TJ=25oC TJ=25oC TC=25oC TC=125oC TC=150oC TC=25oC TC=125oC VALUE 650 650 650 11 6 4 26 23 UNITS V V V A A A A A February 11,2015-REV.01 Page 1 SiC04A065TMAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS Non-Repetitive Peak Forward Surge Current TC=25oC (TP=10mS, Hal...