Overview: PD27025F 25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET
Introduction
The PD27025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for .. 2.5GHz - 2.7GHz Class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance. Packaged in an industry-standard CuW package capable of deliver ing a minimum output power of 25 W, it is ideally suited for today's RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym R
JC Value 2.1 Unit °C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current—Continuous Derate Above 70 ° C: Operating Junction Temperature Storage Temperature Range Sym Value VDSS 65 VGS –0.5, +15 ID 4.25 83.5 — TJ 0.48 200 Unit Vdc Vdc Adc W W/°C °C Total Dissipation at TC = 70 °C: PD TSTG –65, +150 °C PD27025F (flanged) Figure 1.
