PSD35 Overview
1.5 Nm 135 g Symbol Test Conditions Characteristic Value I R VF VTO rT R thJC RthJK VR = VRRM, TVJ = 25°C ≤ VR = VRRM, TVJ = TVJM ≤ IF = 150 A, TVJ = 25 °C ≤ For power-loss calculations only per Diode; DC per module 0.3 mA 5 mA 2.2 V 0.85 V 12 mΩ 2.8 K/W 0.7 K/W 3.4 K/W 0.85 K/W ds Creeping distance on surface dA Creeping distance in air a Max. allowable acceleration 18.6 mm 18.6 mm 50 m/s² Data according to IEC...
PSD35 Key Features
- Isolation voltage 3000 V∼
- Planar glass passivated chips
- Blocking voltage up to 1800 V
- Low forward voltage drop
- UL registered E 148688
