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YANGZHOU POSITIONING TECH. CO., LTD
PSTATA644S28 Asymmetric thyristors Features:
. All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2100 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
VRRM (1) VDRM (1) VRSM (1)
20
2800
2100
VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage and off state lCeraitkicaaglerate of voltage rise
IRRM IDRM
dV/dt (4)
1000 mA 200 mA (3)
500 V/sec
Conducting - on state
Notes: All ratings are specified for Tj=25 oC unless otherwise stated.