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R3968FC28M Datasheet Preview

R3968FC28M Datasheet

HIGH POWER THYRISTOR

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Technical Data :
Page1 of 3
R3968FC28M
- Power Thyristor
2800 VDRM;
**********************************************************************************************************
HIGH POWER THYRISTOR FOR INVERTER APPLICATIONS
Features:
. All Diffused Structure
. Involute Amplifying Gate Configuration
. Blocking capabilty up to 2800 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Device
Type
VRRM (1)
VDRM (1) VRSM (1)
R3968FC28M
2800
2800
2900
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse
leakage and off state leakage
Critical rate of voltage rise
IRRM / IDRM
dV/dt (4)
200 mA (3)
200 V/μsec
Conducting - on state
Parameter
Average value of on-state current
RMS value of on-state current
Peak one cPSTCle surge
(non repetitive) current
I square t
Latching current
Holding current
Peak on-state voltage
Critical rate of rise of on-state
current (5, 6)
Critical rate of rise of on-state
current (6)
Symbol Min. Max.
Typ.
IT(AV)
4001
ITRMS
7988
66000
ITSM
I2t 21.7x106
IL
1000
IH
500
VTM
2.45
di/dt
1000
di/dt
500
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 μF capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Units Conditions
A Sinewave,180o conduction,TS=55oC
A Nominal value
A 10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
A2s 10.0 msec
mA VD = 24 V; RL= 12 ohms
mA VD = 24 V; I = 2.5 A
V ITM = 6000 A; Tj = 125 oC
A/μs
A/μs
Switching from VDRM 1000 V,
non-repetitive
Switching from VDRM 1000 V




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R3968FC28M Datasheet Preview

R3968FC28M Datasheet

HIGH POWER THYRISTOR

No Preview Available !

ELECTRICAL CHARACTERISTICS AND RATINGS
Thyristor
Technical Data :
Page 2 of 3
R3968FC28M- Power
Gating
Parameter
Peak gate power dissipation
Average gate power dissipation
Symbol Min.
PGM
PG(AV)
Max. Typ.
200
5
Units
W
W
Conditions
tp = 40 us
Peak gate current
Gate current required to trigger all
units
IGM
IGT
Gate voltage required to trigger all VGT
units
20
300
200
125
5
4
0.30
Peak negative voltage
VGRM
20
A
mA VD = 6 V;RL = 3 ohms;Tj = -40 oC
mA VD = 6 V;RL = 3 ohms;Tj = +25 oC
mA VD = 6 V;RL = 3 ohms;Tj = +125oC
V VD = 6 V;RL = 3 ohms;Tj = -40 oC
V VD = 6 V;RL = 3 ohms;Tj = 0-125oC
V VD = Rated VDRM; RL = 1000 ohms;
Tj = + 125 oC
V
Dynamic
Parameter
Delay time
Turn-off time
Reverse recovery current
Symbol Min.
td 0.8
tq 50
Irr
Max. Typ.
2.0
Units
μs
70 μs
100
A
Conditions
ITM = 4000 A; VD = 67% VDRM
Gate pulse: VG = 30 V; RG = 10 ohms;
tr = 0.1 μs; tp = 20 μs
ITM =4000 A; di/dt = 60A/μs;
VR 100 V; Re-applied dV/dt = 20
V/μs linear to 67% VDRM ;
Tj = 125 oC; Duty cPSTCle 0.01%
ITM =4000 A; di/dt = 60 A/μs;
VR -50 V; Tj = 125 oC
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Operating temperature
Storage temperature
Thermal resistance - junction to
sink
Mounting force
Weight
Symbol Min. Max. Typ.
Tj -40 +125
Tstg -40 +150
RΘ (j-S)
P
W
0.0065
81 99
2.7
Units
oC
oC
Conditions
oC/W Double sided cooled
kN
Kg.
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data


Part Number R3968FC28M
Description HIGH POWER THYRISTOR
Maker PST
Total Page 3 Pages
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