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Description | The devices are full bridge drivers to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. The six independent drivers are controlled at the low-side using CMOS and LSTTL compatible signals, down to 3.3V logic. The device includes an under-voltage detection unit with hysteresis characteristic and over-current detection. The over-current... |
Features |
Drives up to six IGBT/MOSFET power devices All high side channels fully operate up to +600V Gate drive supplies up to 18 V per channel Under-voltage lockout for all channels Over-current protection Flexible over-temperature shutdown input Advanced input filter Built-in dead-time protection Shoot-through (cross-conduction) protecti... |
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