PL2301GD Description
PL2301GD PULAN TECHNOLOGY CO., LIMITED P-Channel High Density Trench MOSFET PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max -20V -2.2 125 @ VGS= 4.5V -1.4 170 @ VGS= 2.5V.
PL2301GD Key Features
- Super high dense cell trench design for low RDS(on). -Rugged and reliable. -Surface Mount package