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PJA45N02
20V N-CHANNEL ENHANCEMENT MODE MOSFET
VOLTAGE FEATURES
• RDS(ON), VGS@1.8V,ID@1.5A<87m • RDS(ON), VGS@4.5V,ID@3.6A<40m • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Low Gate Charge • ILead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free)
0.079(2.00) 0.070(1.80) 0.008(0.20) 0.003(0.08) 0.056(1.40) 0.047(1.20) 0.120(3.04) 0.110(2.80)
20 Volts
CURRENT
3.6 Amperes
0.006(0.15)MIN. 0.044(1.10) 0.035(0.90) 0.020(0.50) 0.013(0.35)
MECHANICAL DATA
• Case: SOT-23 Package • Terminals : Solderable per MIL-STD-750,Method 2026 • Apporx. Weight : 0.0003 ounces, 0.0084grams • Marking : 45
0.004(0.10) 0.000(0.00)
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PJA45N02 Datasheet
