Datasheet4U Logo Datasheet4U.com

PJA55P03 - 30V P-Channel MOSFET

Key Features

  • RDS(ON), VGS@-10V,ID@-4.3A < 48 mΩ.
  • RDS(ON), VGS@-4.5V,ID@-3.5A < 55 mΩ.
  • Advanced Trench Process Technology.
  • High Density Cell Design For Ultra Low On-Resistance.
  • Specially Designed for DC/DC Converters.
  • Low Voltage.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PJA138K 50V N-Channel Enhancement Mode MOSFET Pan Jit International
PJA138L N-Channel Enhancement Mode MOSFET Pan Jit International
PJA3400 N-Channel Enhancement Mode MOSFET Pan Jit International
PJA3401 P-Channel Enhancement Mode MOSFET Pan Jit International
PJA3402 N-Channel Enhancement Mode MOSFET Pan Jit International

Other Datasheets by PanJit Semiconductor

Part Number Description
PJA3402-AU 30V N-Channel Enhancement Mode MOSFET
PJA3471 100V P-Channel Enhancement Mode MOSFET
PJA3476-AU 100V N-Channel Enhancement Mode MOSFET
PJA45N02 20V N-Channel Enhancement Mode MOSFET
PJA63P02 20V P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PJA55P03 30V P-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE FEATURES • RDS(ON), VGS@-10V,ID@-4.3A < 48 mΩ • RDS(ON), VGS@-4.5V,ID@-3.5A < 55 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Low Voltage Application • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free) 0.067(1.70) 0.059(1.50) 0~8 o 30 Volts CURRENT 4.3 Amperes 0.024(0.6) O O 0.008(0.20) 0.111(2.82) 0.079(2.00) 0.071(1.80) 0.008(0.20) 0.004(0.10) MECHANICAL DATA • Case: SOT-23-1 Package 0.004(0.10)MAX. 0.049(1.25) 0.041(1.05) 0.045(1.15) 0.041(1.05) 0.020(0.50) 0.012(0.30) • Terminals : Solderable per MIL-STD-750,Method 2026 • Apporx. Weight : 0.0003 ounces, 0.