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09N03 - PJD09N03

Key Features

  • RDS(ON), VGS@10V,IDS@30A=9mΩ.
  • RDS(ON), VGS@4.5V,IDS@30A=12mΩ.
  • Advanced trench process technology.
  • High Density Cell Design For Uitra Low On-Resistance.
  • Specially Designed for DC/DC Converters and Motor Drivers.
  • Fully Characterized Avalanche Voltage and Current.
  • Pb free product : 99% Sn above can meet RoHS environment substance directive request.

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Full PDF Text Transcription for 09N03 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 09N03. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet.co.kr PJD09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4....

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V,IDS@30A=9mΩ • RDS(ON), VGS@4.

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