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Pan Jit International

BSS138 Datasheet Preview

BSS138 Datasheet

50V N-Channel Enhancement Mode MOSFET

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BSS138
50V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R , V @10V,I @500mA=3Ω
DS(ON) GS
DS
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• RDS(ON), VGS@2.5V,IDS@100mA=6Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected
• In compliance with EU RoHS 2002/95/EC directives
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 138
• Apporx. Weight: 0.0003 ounce, 0.0084 gram
0.004(0.10)MAX.
0.020(0.50)
0.013(0.35)
0.008(0.20)
0.003(0.08)
0.044(1.10)
0.035(0.90)
Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation
TA= 2 5 OC
TA= 7 5 OC
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e
Range
Junction-to Ambient Thermal Resistance(PCB mounted)2
S ym b o l
VDS
V GS
ID
IDM
PD
T J , T S TG
RθJA
Limit
50
+20
300
2000
350
210
-55 to + 150
357
Uni ts
V
V
mA
mA
mW
OC
OC /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
October 04,2010-REV.00
PAGE . 1




Pan Jit International

BSS138 Datasheet Preview

BSS138 Datasheet

50V N-Channel Enhancement Mode MOSFET

No Preview Available !

BSS138
ELECTRICALCHARACTERISTICS
Parameter
S ym b o l
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Drain-Source On-State
Re s i s ta nc e
Drain-Source On-State
Re s i s ta nc e
Drain-Source On-State
Re s i s ta nc e
Zero Gate Voltage Drain
C urrent
Gate Body Leakage
B V DSS
V
GS ( th)
R D S ( o n)
R D S ( o n)
R D S ( o n)
I
DSS
IGS S
Forward Transconductance
g fS
Dynamic
To ta l Ga te C ha r g e
Turn-On Ti me
Tur n- Off Ti me
Input C apaci tance
Output Capacitance
Re ve rse Tra ns fe r
C a p a c i ta nce
Source-Drain Diode
Qg
ton
toff
C iss
C oss
C rss
Te s t C o nd i ti o n
V GS=0 V , ID=1 0 uA
V =V , I =250uA
DS GS D
VGS=2.5V , I D=100mA
VGS=4.5V , I D=200mA
VGS=10V , I D=500mA
V =50V , V =0V
DS GS
V GS=+20V , VDS=0V
V DS=1 0 V , ID=2 5 0 mA
V DS=2 5 V, ID=2 5 0 mA
VGS=4.5V
VDD=30V , RL=100Ω
ID=300mA , VGEN=10V
RG=6Ω
VDS=25V , V GS=0V
f=1.0MHZ
Mi n. Typ .
50 -
0.8 -
- 2.8
- 1.8
- 1.6
--
--
100 -
--
--
--
--
--
--
Diode Forward Voltage
C ontinuous Diode Forward
C urrent
Pulse Diode Forward
C urrent
V SD
IS
ISM
IS=250mA , VGS=0V
-
-
- 0.82
--
--
Switching
Test Circuit
VIN
VDD Gate Charge
Test Circuit
RL VGS
VOUT
Max. Units
-V
1.5 V
6.0
4.0 Ω
3.0
1 μA
+10 μA
- mS
1.0
40
150
50
10
5
nC
ns
pF
1.2
300
2000
V
mA
mA
VDD
RL
RG 1mA
RG
October 04,2010-REV.00
PAGE . 2


Part Number BSS138
Description 50V N-Channel Enhancement Mode MOSFET
Maker Pan Jit International
Total Page 3 Pages
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