F10N60 - 600V N-Channel Enhancement Mode MOSFET

PanJit Semiconductor

Key Features

10A , 600V, R DS(ON)=1.0Ω@VGS=10V, ID=5.0A.
Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D.

F10N60 600v n-channel enhancement mode mosfet by PanJit Semiconductor - Datasheet Preview

Datasheet Details

Part number	F10N60
Manufacturer	PanJit Semiconductor
File Size	264.30 KB
Description	600V N-Channel Enhancement Mode MOSFET
Datasheet	F10N60 Datasheet

Full PDF Text Transcription for F10N60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for F10N60. For precise diagrams, and layout, please refer to the original PDF.

PJP10N60 / PJF10N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, R DS(ON)=1.0Ω@VGS=10V, ID=5....

View more extracted text

10V, ID=5.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
ROUM	F10N60	10A 600V N-channel Enhancement Mode Power MOSFET	ROUM

More Datasheets from PanJit Semiconductor

Part Number	Description
F10N65	650V N-Channel Enhancement Mode MOSFET