PJ04N03D Description
PJ04N03D 25V N-Channel Enhancement Mode Field Effect Transistor.
PJ04N03D Key Features
- RDS(ON),VGS@10V,I DS@30A=4mΩ
- RDS(ON),VGS@5.0V,I DS@24A=6mΩ
- Advanced trench process technology
- High Density Cell Design For Uitra Low On-Resistance
- Specially Designed for DC/DC Converters and Motor Drivers
- Fully Characterized Avalanche Voltage and Current
- In pliance with EU RoHS 2002/95/EC directives G S D TO-252
- Case : TO-252 Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
- Marking : 04N03D G D